JPH0548937B2 - - Google Patents

Info

Publication number
JPH0548937B2
JPH0548937B2 JP62293309A JP29330987A JPH0548937B2 JP H0548937 B2 JPH0548937 B2 JP H0548937B2 JP 62293309 A JP62293309 A JP 62293309A JP 29330987 A JP29330987 A JP 29330987A JP H0548937 B2 JPH0548937 B2 JP H0548937B2
Authority
JP
Japan
Prior art keywords
film
semiconductor layer
type
region
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62293309A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01135067A (ja
Inventor
Tadashi Daimon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP62293309A priority Critical patent/JPH01135067A/ja
Publication of JPH01135067A publication Critical patent/JPH01135067A/ja
Publication of JPH0548937B2 publication Critical patent/JPH0548937B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP62293309A 1987-11-20 1987-11-20 半導体装置の製造方法 Granted JPH01135067A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62293309A JPH01135067A (ja) 1987-11-20 1987-11-20 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62293309A JPH01135067A (ja) 1987-11-20 1987-11-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH01135067A JPH01135067A (ja) 1989-05-26
JPH0548937B2 true JPH0548937B2 (en]) 1993-07-22

Family

ID=17793167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62293309A Granted JPH01135067A (ja) 1987-11-20 1987-11-20 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH01135067A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648659U (ja) * 1992-10-13 1994-07-05 泰江 吉本 鼻孔の霧状噴射洗浄器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648659U (ja) * 1992-10-13 1994-07-05 泰江 吉本 鼻孔の霧状噴射洗浄器

Also Published As

Publication number Publication date
JPH01135067A (ja) 1989-05-26

Similar Documents

Publication Publication Date Title
JPH0697665B2 (ja) 集積回路構成体の製造方法
US4191595A (en) Method of manufacturing PN junctions in a semiconductor region to reach an isolation layer without exposing the semiconductor region surface
JP3098848B2 (ja) 自己整合型プレーナモノリシック集積回路縦型トランジスタプロセス
JPH0548937B2 (en])
JPS624339A (ja) 半導体装置及びその製造方法
JP3093615B2 (ja) 半導体装置の製造方法
JP2715494B2 (ja) 半導体装置の製造方法
JP2890509B2 (ja) 半導体装置の製造方法
JP2917646B2 (ja) 半導体集積回路装置の製造方法
JPH0245331B2 (en])
JPH06216140A (ja) 狭ベース効果を除去するためのトランジスタプロセス
JP2654536B2 (ja) 半導体装置およびその製造方法
JPS6410952B2 (en])
JP3224320B2 (ja) 半導体素子の製造方法
JP2890550B2 (ja) 半導体装置の製造方法
JP3132023B2 (ja) 半導体装置の製造方法
JPH0579186B2 (en])
JPS5846647A (ja) 半導体装置の製造方法
JP3077638B2 (ja) 半導体装置の製造方法
JPH0744183B2 (ja) 半導体装置の製造方法
JPH061815B2 (ja) 半導体装置の製造方法
JP2557840B2 (ja) 半導体装置の製造法
JP2656125B2 (ja) 半導体集積回路の製造方法
JPH0132669B2 (en])
JPH04168764A (ja) 半導体装置の製造方法